MR S 45-N Lenth =1810 mm L5 - Distance to first bo

MR S 45-N Lenth =1810 mm L5 - Distance to first bore (in mm)=38.75mm    SCHNEEBERGER

  Turbo Pump : CH#A, CH#B
  Dry Pump : QDP80 (CH#A, CH#B, CH#D, L/L)
 

Vulcan Horizontal Furnace (H2-Aneal)
* Wafer Size : 150mm
* 1System 1Tube Anneal
* Loading Wafer Q’ty : 1~50 wafers (Process wafer) / 1Tube
* Electric Power : 380VAC 3phase 50/60Hz (R,S,T,G)
* Temperature Control Zone : 3Zone Control
* Process Temperature : 400~500℃, ±0.5℃
* Temp Control Mode : Spike & Profile T/C Select Control Mode
* Spike Thermo Couple Type : “R”-Type
* Max Temp Up Rate : 25℃/min
* Max Temp Down Rate : 3~7℃/min
* Over Temp Detection : Max 700℃, All Zone Excess Temp Detection

 

OP2600 Film Thickness monitor
* The Therma-Wave Opti-Probe 2600 is   for measurement of a wide range of optical beters such as film thickness of multiple layers and index of refrb.
* Compatible with wafers ranging from 4- to 8-inches, the system has two cassette loader stations.
* The Opti-Probe supports Beam Profile Reflectrometry (BPR) and Beam Profile Ellipsometry (BPE) modes.
* A 675nm thermoelectrically cooled diode laser is   to establish the optical beter and in spectrometry mode a visible 450 to 840 nm tungsten halogen lamp it  .
* Supports the full range of thick and thin film, refractive indexes, extinction coefficient and reflectivity measurements
  Multi-layer and multi-beter measurements on thin ONO and OPO film stacks
* BPR (Beam Profile Reflectometry : thick dielectric films > 500A)
* BPE (Beam Profile Ellipsometry : thin dielectric films < 500A)
* Spectrometry (High Index films : C-Si, Poly-Si, A-Si)
 

S-9200 CD-SEM
* Resolution (nm) : 3 / Repeatability (nm) : 3
* Throughput (wafer/h) : 45 (in continuous measurement via recipe, under Hitachi standard test conditions)
* Wafer size (inch) 6, 8
* Principle of CD measurement : Cursor line profile measurement
* CD Measure Range : 0.1 to 2.0μm
* CD Measurement reproducibility : ±1% or 3nm (3 sigma), whichever larger
* Secondary electron image resolution : 3nm(at accelerating voltage of 0.8kV; with reference specimen for resolution measurement)
* Image magnification : SEM image; x500 to x300,000 (CD measurement
* Reproducibility guarantee range: x40,000 to x200,000, excluding effects of contamination or charge-up)
* Optical microscope image; About x110
 

Surfscan SFS-6220 Particle Counter
* Sizes, and counts defects down to 0.09 μm at an 80% capture rate.
  – Wafer Size : 4 – 8 inch.
  – Non-patterned surface Inspection System.
  – 0.1 Micron Defect Sensitivity (PSL STD).
  – 0.02 ppm Haze Sensitivity.
  – 0.002 ppm Haze Resolution.
  – Accuracy within 1%. / XY coordinates.
  – Lock Down accessories.
  – Defect Map and Histogram with Zoom
  – Haze Map and Histogram with Zoom
  – Argon Ion Laser (488nm)
  – 2D Signal Integration
 

RS75 Four Point Probe System
* Analyze sheet resistance data, on various conductive layers such as implants, diffusion, epi, CVD, bls, and bulk substrates
* Provides accurate and repeatable sheet resistance measurements, from 5 m ohm/sq to 5M ohm/sq on 2-inch to 8-inch wafers, by uniting sophisticated modeling algorithms, advanced analysis techniques, and precision electronics.
  – Model: RS-75 / Four Point Probe System / Up to 200 mm wafers
  – One second per site overall measurement speed
  – A 49-site contour map with temperature compensation can be achieved on a manually loaded test wafer in less than sixty seconds.
  – Provides precise sheet resistance measurements for monitor wafers, with significantly improved speed over existing systems.
  – Ideal for a wide range of semiconductor process monitoring applications such as ion implantation, bl deb, CMP, diffusion, polysilicon, epi, RTP and bulk silicon.