產(chǎn)品詳情
MRS25-N-G3 Schneeberger Lenth=750 mm L5 - Distance to first bore (in mm)=13.5mm SCHNEEBERGER
Relay Tester With HP Compaq ,TDK Lambda
Relay Tester With HP Compaq Pickering Interfaces 40-914-001
Rudolph Research AutoEL SS291
S-204B KrF Scanner
* Wafer Size : 150mm
* Resolution : 150nm
* NA : 0.68
* Exposure light source : KrF excimer laser (248 nm wavelength)
* Reduction ratio : 1:4
* Exposure field :+C25:K25 25 × 33 mm
* Alignment accuracy (EGA, |M| + 3σ) : 35 nm
ACT-8 (2C,2D) Track
* Wafer Size : 150mm
– Adhesion Treatment on Substrates
– Photo Resist Coating
– Development
– Hard Baking
* Configuration : Single Block
* 1-BARC, 1-COT, 2-DEV
* 1-ADH, 6-LHP, 2-CPL, 4-CHP, 3-TRS, 1-CWH
Centura-5200 (SiC, Cr) PVD
* Wafer Size : 150mm
– 2 Process Chamber system
– Process : CH#A SiC, CH#B Cr
(Lid source : Cu Standard body 12.9 Inch)
* MFC:
CH#A Ar-100sccm, BAr-50sccm, N2 10sccm
CH#B Ar-100sccm, BAr-50sccm
DC Power : CH#A & B MDX 10K / Out put10Kw
RF Generator : CH#A OEM-12B power output 1250Watte, Frequecy 13.56 / CH#B N/A
Precision-5000 (SiO2) PECVD
* Wafer Size : 150mm
– 2 Process Chamber : CH#A SiO2, CH#B SiO2
* MFC :
CH#A : SiH4-300sccm, N2O-1000sccm, N2-5000sccm, CF4 2000sccm
CH#B : SiH4-300sccm, N2O-1000sccm, N2-5000sccm, CF4 2000sccm
CH#A RF generator : ENI OEM-12B
CH#B RF generator : ENI OEM-12B
Line Frequency : 50/60 Hz
Line Voltage : 208V / 250 Amp / 5Wires(R,S,T,N,G)
Precision-5000 Mxp+ (Cr, SiO2)Etch + PR-Strip
* Wafer Size : 150mm
* Vacuum Load-Lock / 2-Load Port / 3-Process Chamber System
* Process : CH#A MERIE Oxide, CH#B MERIE Metal, CH#D ASP PR Strip
* Chuck :
CH#A ESC, CH#B ESC, CH#D Al-Chuck
* Heating :
CH#A,#B Wall (40’C~60’C), ESC (0~40’C)
CH#D Halogen Lamp (~300’C)
* RF Generator :
CH#A ENI/OEM-10B/1250W/13.56MHz
CH#B ENI/OEM-10B/1250W/13.56MHz
CH#D Astex/AX2115/1500W/Microwave
* MFC :
CH#A MFC Ar-200sccm, O2-100sccm, CF4-100sccm, CHF3-100sccm
CH#B O2-200, Cl2-200
CH#D O2-5000, N2-200
* Baratron Gauge :
CH#A 1Torr, CH#B 1Torr, CH#D 100Torr/10Torr
